Graphene - Quantum Dot Photodetectors
Combining high mobility graphene transistors with efficient light absorbing colloidal quantum dots may pave a way for cheap, high resolving infrared photodetectors. Light is absorbed in the Quantum Dot layer, creating excitons. One charge carrier type is transferred faster to the biased graphene transistor, leading to an additional electric field. This is measured by a current change in the graphene transistor. We are investigating the detailed mechanism of these graphene-QDs photodetectors, expanding the range of spectral photoresponse, and increasing the detectivity.
M. J. Grotevent, C. U. Hail, S. Yakunin, D. N. Dirin, K. Thodkar, G. B. Barin, P. Guyot-Sionnest, M. Calame, D. Poulikakos, M. V. Kovalenko, I. Shorubalko "Nanoprinted Quantum Dot–Graphene Photodetectors", Adv. Optical Mater. 2019, 1900019
M. J. Grotevent, C. U. Hail, S. Yakunin, D. Bachmann, G. Kara, D. N. Dirin, M. Calame, D. Poulikakos, M. V. Kovalenko, and I. Shorubalko "Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors", ACS Appl. Mater. Interfaces 2021, 13, 1, 848–856
M. J. Grotevent, C. U. Hail, S. Yakunin, D. Bachmann, M. Calame, D. Poulikakos, M. V. Kovalenko, I. Shorubalko "Colloidal HgTe Quantum Dot/Graphene Phototransistor with a Spectral Sensitivity Beyond 3 µm", Adv. Sci. 2021, 202003360