Oxide Film Defect Engineering

Most oxide-film technologies rely on the nominal properties of a presumed crystalline bulk oxide phase. However, the formation of compositional, structural and electronic defects during oxide-film growth is very hard to control and critically depends on the synthesis route. Hence, most functional oxide films are highly defective or even amorphous, as well as intrinsically unstable in harsh operating environments. Our research aims at fundamental knowledge on the role of compositional, structural and electronic defects in thin oxide films on their functional properties (e.g. dielectric constant, thermal, ionic and electrical conductivity, electrochemical reactivity, biocompatibility, wettability, joinability, H-permeability, photocatalytic activity). We provide support and guidance in the defect engineering of oxide-film properties  for 'real-life' applications in the fields of e.g. corrosion protection, oxide sensing technologies, printed oxide electronics, microelectronics, medical implants and photocatalysts.

OUR RESEARCH

  • Fabrication of metal oxides (e.g. Ti, Al, Fe, W, Si) by different synthesis techniques (see below)

  • Characterization of compositional, structural and electronic defects in oxide films by advanced  bulk- and surface-sensitive analytical methods (see below)

  • Fundamental understanding of the role of compositional, structural and electronic defects in thin oxide films on their electronic and optical properties, ionic conductivity, electrochemical reactivity and photocatalytic response.

  • Environmental interaction and durability of defective oxide films in harsh environments (see here)

OXIDE FILM SYNTHESIS

  • Anodization
  • Thermal Oxidation
  • Electrophoretic Deposition
  • Reactive Magnetron Sputtering (including in-situ film stress monitoring)
  • Atomic Layer Deposition (ALD)*
  • Pulsed Laser Deposition (PLD)*

OXIDE CHARACTERIZATION

 

* Through internal collaboration

defects, oxides, oxide film, defect engineering, amorphous, crystalline, oxidation, HAXPES, chemical reactivity,  ionic conductivity, electrical conductivity, electrochemical reactivity, biocompatibility, wettability, photocatalytic activity, dielectric constant
defects, oxides, oxide film, defect engineering, amorphous, crystalline, oxidation, HAXPES, chemical reactivity,  ionic conductivity, electrical conductivity, electrochemical reactivity, biocompatibility, wettability, photocatalytic activity, dielectric constant
defects, oxides, oxide film, defect engineering, amorphous, crystalline, oxidation, HAXPES, chemical reactivity,  ionic conductivity, electrical conductivity, electrochemical reactivity, biocompatibility, wettability, photocatalytic activity, dielectric constant
defects, oxides, oxide film, defect engineering, amorphous, crystalline, oxidation, HAXPES, chemical reactivity,  ionic conductivity, electrical conductivity, electrochemical reactivity, biocompatibility, wettability, photocatalytic activity, dielectric constant
defects, oxides, oxide film, defect engineering, amorphous, crystalline, oxidation, HAXPES, chemical reactivity,  ionic conductivity, electrical conductivity, electrochemical reactivity, biocompatibility, wettability, photocatalytic activity, dielectric constant

Your Contacts
Dr. Claudia Cancellieri

Dr. Claudia Cancellieri
Principal Scientist

Telefon: +41 58 765 4324
claudia.cancellieri@empa.ch

 

Dr. Lars Jeurgens
Head of the Laboratory

Phone: +41 58 765 40 53
lars.jeurgens@empa.ch

 

Dr. Patrik Schmutz

Dr. Patrik Schmutz
Gruppenleiter (Stv.)

Phone: +41 58 765 4845
patrik.schmutz@empa.ch